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BUZ 100L
SIPMOS (R) Power Transistor * N channel * Enhancement mode * Avalanche-rated * Logic Level * dv/dt rated * Ultra low on-resistance * 175 C operating temperature * also in TO-220 SMD available Pin 1 G Pin 2 D Pin 3 S
Type BUZ 100L
VDS
50 V
ID
60 A
RDS(on)
0.018
Package TO-220 AB
Ordering Code C67078-S1354-A2
Maximum Ratings Parameter Continuous drain current Symbol Values 60 Unit A
ID IDpuls
240
TC = 101 C
Pulsed drain current
TC = 25 C
Avalanche energy, single pulse
EAS
250 dv/dt 6
mJ
ID = 60 A, VDD = 25 V, RGS = 25 L = 70 H, Tj = 25 C
Reverse diode dv/dt kV/s
IS = 60 A, VDS = 40 V, diF/dt = 200 A/s Tjmax = 175 C
Gate source voltage Gate-source peak voltage,aperiodic Power dissipation
VGS Vgs Ptot
14 20
V W
TC = 25 C
250
Semiconductor Group
1
07/96
BUZ 100L
Maximum Ratings Parameter Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Symbol Values -55 ... + 175 -55 ... + 175 0.6 75 E 55 / 175 / 56 K/W Unit C
Tj Tstg RthJC RthJA
Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit
V(BR)DSS
50 1.6 0.1 1 10 10 0.014 2 1 100 100 100
V
VGS = 0 V, ID = 0.25 mA, Tj = -40 C
Gate threshold voltage
VGS(th)
1.2
VGS=VDS, ID = 1 mA
Zero gate voltage drain current
IDSS
A nA A nA 0.018
VDS = 50 V, VGS = 0 V, Tj = 25 C VDS = 50 V, VGS = 0 V, Tj = -40 C VDS = 50 V, VGS = 0 V, Tj = 150 C
Gate-source leakage current
IGSS RDS(on)
VGS = 20 V, VDS = 0 V
Drain-Source on-resistance
VGS = 5 V, ID = 30 A
Semiconductor Group
2
07/96
BUZ 100L
Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Dynamic Characteristics Transconductance Values typ. max. Unit
gfs
25 45 2800 830 350 -
S pF 3750 1250 525 ns 45 70
VDS 2 * ID * RDS(on)max, ID = 30 A
Input capacitance
Ciss Coss
-
VGS = 0 V, VDS = 25 V, f = 1 MHz
Output capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Reverse transfer capacitance
Crss
-
VGS = 0 V, VDS = 25 V, f = 1 MHz
Turn-on delay time
td(on)
VDD = 30 V, VGS = 5 V, ID = 3 A RGS = 50
Rise time
tr
140 210
VDD = 30 V, VGS = 5 V, ID = 3 A RGS = 50
Turn-off delay time
td(off)
350 470
VDD = 30 V, VGS = 5 V, ID = 3 A RGS = 50
Fall time
tf
100 135
VDD = 30 V, VGS = 5 V, ID = 3 A RGS = 50
Semiconductor Group
3
07/96
BUZ 100L
Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Reverse Diode Inverse diode continuous forward current IS TC = 25 C Inverse diode direct current,pulsed A 1.15 85 130 60 240 V 1.8 ns C Values typ. max. Unit
ISM VSD trr Qrr
TC = 25 C
Inverse diode forward voltage
VGS = 0 V, IF = 120 A
Reverse recovery time
VR = 30 V, IF=lS, diF/dt = 100 A/s
Reverse recovery charge
VR = 30 V, IF=lS, diF/dt = 100 A/s
Semiconductor Group
4
07/96
BUZ 100L
Power dissipation Ptot = (TC)
Drain current ID = (TC) parameter: VGS 5 V
65 A 55
260 W 220
Ptot
200 180 160 140 120 100 80 60 40 20 0 0 20 40 60 80 100 120 140 C 180
ID
50 45 40 35 30 25 20 15 10 5 0 0 20 40 60 80 100 120 140 C 180
TC
TC
Safe operating area ID = (VDS) parameter: D = 0.01, TC = 25C
10 3
Transient thermal impedance Zth JC = (tp) parameter: D = tp / T
10 0
K/W A
ID
=
10 2
) on S( D R
/ID
t = 30.0s p
V
D
S
100 s
ZthJC
10 -1
1 ms
10 -2 D = 0.50
10 ms
0.20 0.10 10 -3 single pulse 0.05 0.02 0.01
10
1
DC
10 0 0 10
10
1
V 10
2
10 -4 -7 10
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
s 10
0
VDS
tp
Semiconductor Group
5
07/96
BUZ 100L
Typ. output characteristics ID = (VDS) parameter: tp = 80 s
140 A 120
Drain-source on-resistance RDS (on) = (Tj ) parameter: ID = 30 A, VGS = 5 V
0.050
Ptot = 250W
l kj i h g
VGS [V] a 2.0
0.040 RDS (on) 0.035 0.030 0.025 0.020 0.015 0.010 0.005 V 5.0 0.000 -60
ID
110 100 90 80 70 60 50 40 30 20
c e f
b c d e f g h i
2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 7.0 8.0 10.0
98% typ
dj
k l
10 b 0 a 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
VDS
-20
20
60
100
C
180
Tj
Typ. transfer characteristics ID = f (VGS)
Typ. forward transconductance gfs = f (ID)
parameter: tp = 80 s VDS2 x ID x RDS(on)max
60 A 50
parameter: tp = 80 s, VDS2 x ID x RDS(on)max
60 S 50
ID
gfs
45 40 35 30 25 20 15 10 5 0 0 1 2 3 4 5 6 7 8 V 10 VGS
45 40 35 30 25 20 15 10 5 0 0 10 20 30 40 A 60
ID
Semiconductor Group
6
07/96
BUZ 100L
Typ. drain-source on-resistance RDS (on) = (ID) parameter: VGS
0.055
a b c d
Gate threshold voltage VGS (th) = (Tj) parameter: VGS = VDS, ID = 1 mA
4.6 V 4.0
0.045 RDS (on) 0.040
VGS(th)
3.6 3.2
0.035 2.8 0.030 0.025 0.020 0.015 0.010
VGS [V] =
i e g f h j
2.4
98%
2.0
typ
1.6
2%
1.2 0.8
0.005 0.000 0
a 2.5 2.0 3.0
b 3.5
c 4.0
d 4.5
e f 5.0 5.5
g 6.0
h i j 7.0 8.0 10.0
0.4 120 0.0 -60 -20 20 60 100 C 180
20
40
60
80
A
ID
Tj
Typ. capacitances
C = f (VDS) parameter:VGS = 0V, f = 1MHz
10 4
Forward characteristics of reverse diode IF = (VSD) parameter: Tj , tp = 80 s
10 3
A
C
pF
IF Ciss
10 2
10 3
Coss
10 1
Crss
Tj = 25 C typ Tj = 175 C typ Tj = 25 C (98%) Tj = 175 C (98%)
10 2 0
5
10
15
20
25
30
V 40 VDS
10 0 0.0
0.4
0.8
1.2
1.6
2.0
2.4
V
3.0
VSD
Semiconductor Group
7
07/96
BUZ 100L
Avalanche energy EAS = (Tj ) parameter: ID = 60 A, VDD = 25 V RGS = 25 , L = 70 H
260 mJ 220
Typ. gate charge VGS = (QGate) parameter: ID puls = 90 A
16
V
EAS
200 180 160 140 120 100 80 60 40
VGS
12
10
8
0,2 VDS max
0,8 VDS max
6
4
2 20 0 20 0 40 60 80 100 120 140 C 180 0 20 40 60 80 100 120 nC 160
Tj
Q Gate
Drain-source breakdown voltage V(BR)DSS = (Tj )
62 V 60
V(BR)DSS 59
58 57 56 55 54 53 52 51 50 49 48 47 -60
-20
20
60
100
C
180
Tj
Semiconductor Group
8
07/96
BUZ 100L
Package Outlines TO-220 AB Dimension in mm
Semiconductor Group
9
07/96

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